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BZX84B4V7LT1, BZX84C2V4LT1 Series Zener Voltage Regulators
225 mW SOT-23 Surface Mount
This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards.
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3 Cathode
1 Anode
* * * * * * *
225 mW Rating on FR-4 or FR-5 Board Zener Breakdown Voltage Range - 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 KV) per Human Body Model Tight Tolerance Series Available (See Page 4) Pb-Free Packages are Available
MARKING DIAGRAM
3 1 2 SOT-23 CASE 318 STYLE 8 1
xxx M G G
Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V-0 MAXIMUM RATINGS
Rating Total Power Dissipation on FR-5 Board, (Note 1) @ TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient Total Power Dissipation on Alumina Substrate, (Note 2) @ TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range Symbol PD RqJA PD RqJA TJ, Tstg Max 225 1.8 556 300 2.4 417 -65 to +150 Unit mW mW/C C/W mW mW/C C/W C
xxx = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) * Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device BZX84CxxxLT1 BZX84CxxxLT1G BZX84CxxxLT3 BZX84CxxxLT3G BZX84BxxxLT1 BZX84BxxxLT1G BZX84BxxxLT3 BZX84BxxxLT3G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
SOT-23 10,000/Tape & Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2009
July, 2009 - Rev. 13
1
Publication Order Number: BZX84C2V4LT1/D
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Symbol VZ IZT ZZT IR VR IF VF QVZ C Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF Maximum Temperature Coefficient of VZ Max. Capacitance @ VR = 0 and f = 1 MHz VZ VR IR VF IZT V IF I
Zener Voltage Regulator
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BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS - BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VZ1 (Volts) @ IZT1 = 5 mA (Note 3) Device* BZX84C2V4LT1, G BZX84C2V7LT1, G BZX84C3V0LT1, G BZX84C3V3LT1, G BZX84C3V6LT1, G BZX84C3V9LT1, G BZX84C4V3LT1, G BZX84C4V7LT1, G BZX84C5V1LT1, G BZX84C5V6LT1, G BZX84C6V2LT1, G BZX84C6V8LT1, G BZX84C7V5LT1, G BZX84C8V2LT1, G BZX84C9V1LT1, G BZX84C10LT1, G BZX84C11LT1, G BZX84C12LT1, G BZX84C13LT1, G BZX84C15LT1, G BZX84C16LT1, G BZX84C18LT1, G BZX84C20LT1, G BZX84C22LT1, G BZX84C24LT1, G Device Marking Z11 Z12 Z13 Z14 Z15 Z16 W9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Min 2.2 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 Nom 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 Max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 VZ2 (V) @ IZT2 = 1 mA (Note 3) Min 1.7 1.9 2.1 2.3 2.7 2.9 3.3 3.7 4.2 4.8 5.6 6.3 6.9 7.6 8.4 9.3 10.2 11.2 12.3 13.7 15.2 16.7 18.7 20.7 22.7 Max 2.1 2.4 2.7 2.9 3.3 3.5 4 4.7 5.3 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14 15.5 17 19 21.1 23.2 25.5 VZ3 (V) @ IZT3 = 20 mA (Note 3) Min 2.6 3 3.3 3.6 3.9 4.1 4.4 4.5 5 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.5 13.9 15.4 16.9 18.9 20.9 22.9 Max 3.2 3.6 3.9 4.2 4.5 4.7 5.1 5.4 5.9 6.3 6.8 7.4 8 8.8 9.7 10.7 11.8 12.9 14.2 15.7 17.2 19.2 21.4 23.4 25.7 Max Reverse Leakage Current IR mA 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 @ VR Volts 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 qVZ (mV/k) @ IZT1 = 5 mA Min -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -2.7 -2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 Max 0 0 0 0 0 -2.5 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0
ZZT1 (W) @ IZT1 = 5 mA 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70
ZZT2 (W) @ IZT2 = 1 mA 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250
ZZT3 (W) @ IZT3 = 20 mA 50 50 50 40 40 30 30 15 15 10 6 6 6 6 8 10 10 10 15 20 20 20 20 25 25
C (pF) @ VR = 0 f = 1 MHz 450 450 450 450 450 450 450 260 225 200 185 155 140 135 130 130 130 130 120 110 105 100 85 85 80
VZ1 Below @ IZT1 = 2 mA Device BZX84C27LT1, G BZX84C30LT1, G BZX84C33LT1, G BZX84C36LT1, G BZX84C39LT1, G BZX84C43LT1, G BZX84C47LT1, G BZX84C51LT1, G BZX84C56LT1, G BZX84C62LT1, G BZX84C68LT1, G BZX84C75LT1, G Device Marking Y10 Y11 Y12 Y13 Y14 Y15 Y16 Y17 Y18 Y19 Y20 Y21 Min 25.1 28 31 34 37 40 44 48 52 58 64 70 Nom 27 30 33 36 39 43 47 51 56 62 68 75 Max 28.9 32 35 38 41 46 50 54 60 66 72 79
ZZT1 Below @ IZT1 = 2 mA 80 80 80 90 130 150 170 180 200 215 240 255
VZ2 Below @ IZT2 = 0.1 mA Min 25 27.8 30.8 33.8 36.7 39.7 43.7 47.6 51.5 57.4 63.4 69.4 Max 28.9 32 35 38 41 46 50 54 60 66 72 79
ZZT2 Below @ IZT4 = 0.5 mA 300 300 325 350 350 375 375 400 425 450 475 500
VZ3 Below @ IZT3 = 10 mA Min 25.2 28.1 31.1 34.1 37.1 40.1 44.1 48.1 52.1 58.2 64.2 70.3 Max 29.3 32.4 35.4 38.4 41.5 46.5 50.5 54.6 60.8 67 73.2 80.2
ZZT3 Below @ IZT3 = 10 mA 45 50 55 60 70 80 90 100 110 120 130 140
Max Reverse Leakage Current IR mA 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 @ VR (V) 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5
qVZ (mV/k) Below @ IZT1 = 2 mA Min 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 Max 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6
C (pF) @ VR = 0 f = 1 MHz 70 70 70 70 45 40 40 40 40 35 35 35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C. * The "G" suffix indicates Pb-Free package available.
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3
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS - BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
ZZT (W) @ IZT = 5 mA (Note 4) Max 80 60 40 10 15 15 15 15 25 30 40 45 55 70 Max Reverse Leakage Current IR mA 3 2 1 3 2 1 0.7 0.5 0.1 0.05 0.05 0.05 0.05 0.05 @ VR Volts 2 2 2 4 4 5 5 6 8 10.5 11.2 12.6 15.4 16.8
Device BZX84B4V7LT1, G BZX84B5V1LT1, G BZX84B5V6LT1, G BZX84B6V2LT1, G BZX84B6V8LT1, G BZX84B7V5LT1, G BZX84B8V2LT1, G BZX84B9V1LT1, G BZX84B12LT1, G BZX84B15LT1, G BZX84B16LT1, G BZX84B18LT1, G BZX84B22LT1, G BZX84B24LT1, G
Device Marking T10 T11 T12 T13 T14 T15 T16 T17 T18 T22 T19 T20 T24 T25
VZ (Volts) @ IZT = 5 mA (Note 4) Min 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 11.8 14.7 15.7 17.6 21.6 23.5 Nom 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 12 15 16 18 22 24 Max 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 12.2 15.3 16.3 18.4 22.4 24.5
qVZ (mV/k) @ IZT = 5 mA Min -3.5 -2.7 -2 0.4 1.2 2.5 3.2 3.8 6 9.2 10.4 12.4 16.4 18.4 Max 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7 10 13 14 16 20 22
C (pF) @ VR =0, f = 1 MHz 260 225 200 185 155 140 135 130 130 110 105 100 85 80
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C. * The "G" suffix indicates Pb-Free package available.
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BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/C) 8 7 6 5 4 3 2 1 0 -1 -2 -3 VZ @ IZT TYPICAL TC VALUES 100 VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL TC VALUES
VZ @ IZT 10
2
3
4
5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V)
11
12
1
10 VZ, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients (Temperature Range - 55C to +150C)
Figure 2. Temperature Coefficients (Temperature Range - 55C to +150C)
1000 Z ZT, DYNAMIC IMPEDANCE ( ) TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz
1000 IF, FORWARD CURRENT (mA) 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1)
IZ = 1 mA
100 5 mA 20 mA 10
100
10
150C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 0.5
75C 25C 0.6
0C 1.1 1.2
0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V)
Figure 3. Effect of Zener Voltage on Zener Impedance
Figure 4. Typical Forward Voltage
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BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
1000 I R , LEAKAGE CURRENT (A) 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) 100 BIAS AT 50% OF VZ NOM 10 TA = 25C 1000 100 10 1 0.1 0.01 + 25C - 55C 0 10 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 90 +150C
0.001 0.0001 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.00001
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100 TA = 25C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 10
100 TA = 25C 10
1
1
0.1
0.1
0.01
0
2
4 6 8 VZ, ZENER VOLTAGE (V)
10
12
0.01
10
30
50 70 VZ, ZENER VOLTAGE (V)
90
Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V)
Figure 8. Zener Voltage versus Zener Current (12 V to 91 V)
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BZX84B4V7LT1, BZX84C2V4LT1 Series
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
E
1 2
HE c e b q 0.25
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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BZX84C2V4LT1/D

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